Brunner, K., Miesner, C., Abstreiter, G., Kienzle, O., & Ernst, F.(2000).Self-Organized Periodic Arrays of SiGe Wires and Ge Islands on Miscut Si Substrates. Physica A, 7(), 881–886.
Han, W., Redlich, P., Ernst, F., & Rühle, M.(2000).Synthesis of GaN-Carbon Composite Nanotubes and GaN Nanorods by Arc Discharge in Nitrogen Atmosphere. Applied Physics Letters, 76(), 652–654.
Han, W., Redlich, P., Seeger, T., Ernst, F., Rühle, M., Hsu, W., ... Walton, D.(2000).Aligned CNx Nanotubes Produced by the Pyrolysis of Ferrocene/C60 Mixtures in Ammonia Atmosphere. Applied Physics Letters, 77(), 1807–1809.
Schmidt, O., Denker, U., Eberl, K., Kienzle, O., & Ernst, F.(2000).Effect of Overgrowth Temperature on the Photoluminescence of Ge/Si Islands. Applied Physics Letters, 77(), 2509–2511.
Gödecke, T., Haalboom, T., & Ernst, F.(2000).Phase Equilibria of Cu–In–Se: I. Stable States and Non-Equilibrium States of the In2Se3–Cu2Se Subsystem. Zeitschrift für Metallkunde, 91(), 622–634.
Gödecke, T., Haalboom, T., & Ernst, F.(2000).Phase Equilibria of Cu–In–Se: II. The Cu–Cu2Se–In2Se3–In Subsystem. Zeitschrift für Metallkunde, 91(), 635–650.
Gödecke, T., Haalboom, T., & Ernst, F.(2000).Phase Equilibria of Cu–In–Se: III. The In2Se3–Se–Cu2Se Subsystem. Zeitschrift für Metallkunde, 91(), 651–662.
Eberl, K., Schmidt, O., Kienzle, O., & Ernst, F.(2000).Preparation and Optical Properties of Ge and C-induced Ge Dots on Si. Thin Solid Films, 373(), 164-169.
Eberl, K., Schmidt, O., Kienzle, O., & Ernst, F.(2000).Preparation and Optical Properties of Ge and C-induced Ge Dots on Si. Mat. Res. Soc. Sym. Proc., 571(), 355–362.
Baither, D., Ernst, F., Wagner, T., Rühle, M., Bartsch, M., & Messerschmidt, U.(1999).Micromechanisms of Fracture in NiAl, Studied by in situ HVEM. Intermetallics, 9(), 479–489.
Ernst, F., Nataraj, R., & Rühle, M.(1999).Nanomechanical Modeling of Misfit Dislocations at Heterointerfaces. Zeitschrift für Metallkunde, 90(), 961–977.
Eberl, K., Schmidt, O., Kienzle, O., & Ernst, F.(1999).Preparation and Optical Properties of Ge and C-induced Ge Dots on Si. Materials Research Society, 570(), 187-195.
